Non volatile memory device and operating metho thereof

非易失性存储装置及其操作方法

Abstract

A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data '0' and a number of data '1' in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.
本发明提供了非易失性存储装置及其操作方法。其中,非易失性存储装置包括:编码器,被配置为对输入数据执行加扰操作;数字和值(DSV)发生器,被配置为生成表示在由编码器编码的输入数据中数据‘0’的数量和数据‘1’的数量之差的DSV;存储单元阵列的页的主单元部件,其中主单元部件被配置为存储由编码器编码的输入数据;页的备用单元部件,其中备用单元部件被配置为存储由DSV发生器生成的DSV;以及读取电压设置部件,被配置为通过对根据主单元部件存储的数据生成的DSV和备用单元部件存储的DSV进行比较来确定页的读取电压。

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Cited By (4)

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    CN-103680629-BJanuary 25, 2017旺宏电子股份有限公司存储器的操作方法及具有该存储器的集成电路
    CN-103761990-AApril 30, 2014上海新储集成电路有限公司一种减少只读存储器漏电流的方法
    CN-104102598-AOctober 15, 2014群联电子股份有限公司数据读取方法、控制电路、存储器模块与存储器储存装置